Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit
Patent
1996-07-01
1997-11-04
Nelms, David C.
Static information storage and retrieval
Read/write circuit
Including level shift or pull-up circuit
365203, 365204, G11C 700
Patent
active
056847459
ABSTRACT:
The present invention provides an SRAM device comprising a first discharger for discharging a first bit line at the write operation when the first bit line is at a low level; a second discharger for discharging a second bit line at the write operation when the second bit line is at a low level; and a pull-up transistor for providing power with the first and second bit lines at the read operation and preventing the power supply from being provided with the first and second bit lines at the write operation, whereby the first or second dischargers converts the voltage level in low level bit line into a ground level when the write operation is performed.
REFERENCES:
patent: 5337270 (1994-08-01), Kawata et al.
patent: 5408437 (1995-04-01), Cho et al.
Kim Seung Min
Yoon Hoon Mo
Hyundai Electronics Industries Co,. Ltd.
Nelms David C.
Niranjan F.
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