Sputtering apparatus having a target backing plate equipped with

Details Sputtering apparatus having a target backing plate equipped with Sputtering apparatus having a target backing plate equipped with

1999-05-18

2000-09-05

Diamond, Alan

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419215, 20419212, 20419216, 20429803, 20429807, 20429809, 20429812, 20429813, C13C 1434, C23C 1440

Patent

active

061137545

ABSTRACT:
A sputtering apparatus for manufacturing semiconductor devices, and a sputtering method using the same, allows for the formation of metal layers having good step coverage and good deposition rate. The sputtering apparatus for manufacturing semiconductor devices includes a process chamber; a target; a backing plate for the target; a cooling gas line on or in the backing plate, such that a cooling gas for cooling the target is circulated through the cooling gas line; and a cooling gas supply apparatus for supplying, discharging and recirculating cooling gas to and from the cooling gas line of the backing plate. The sputtering process is carried out with a high frequency power applied at 15 kW to 45 kW, argon gas supplied at 3 sccm to 10 sccm, and inner pressure in the process chamber at 0.1 mTorr to 1 mTorr. This sputtering apparatus does not require a collimator, therefore none of the particles generated when using a collimator are present to damage the wafers processed in this apparatus.

REFERENCES:
patent: 5334302 (1994-08-01), Kubo et al.
patent: 5567267 (1996-10-01), Kazama et al.
patent: 5985115 (1999-11-01), Hartsough et al.

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