Sputtering apparatus and sputtering method

Chemistry: electrical and wave energy – Processes and products – Coating – forming or etching by sputtering

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20429816, 20429817, 20429818, 20429819, 2042982, C23C 1434

Patent

active

057440115

ABSTRACT:
In a film forming vessel, a substrate destined to carry on the surface thereof a thin film to be formed and a magnetron sputtering source integrally composed of an electric field supply means and a main magnetic field supply means for forming magnetron plasma in the neighborhood of the target and concurrently serving as a target holder for retaining a target in place are disposed as opposed to each other. An electromagnet as an auxiliary magnetic field supply means for decreasing the spatially dispersed amount of magnetron plasma in the neighborhood of the surface of the substrate is also laid out in the film forming vessel. A thin film of compound, for example, is formed on the substrate, with the spatially dispersed amount of magnetron plasma in the neighborhood of the surface of the substrate decreased as described above. As a result, the thin film of excellent quality is formed with high repeatability on a large surface area.

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patent: 4404077 (1983-09-01), Fournier
patent: 4761218 (1988-08-01), Boys
patent: 4853102 (1989-08-01), Tateishi et al.
patent: 4871433 (1989-10-01), Wagner et al.
patent: 4971674 (1990-11-01), Hata
patent: 5196105 (1993-03-01), Feuerstein et al.
patent: 5262030 (1993-11-01), Potter

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