Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Patent
1996-06-13
1999-02-23
Niebling, John F.
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
438655, 438659, 438663, H01L 2142
Patent
active
058743510
ABSTRACT:
A method of controlling stresses in thin films that are deposited over semiconductor device substrates. During anneal process steps, grain growth of the film creates stresses in that can damage or destroy it. The stresses lead to warping and bowing and ultimately to film cracking which undermines desired low resistivity. The present invention imparts thermal stability to thin films by grain boundary stuffing (GBS) of preselected elements that resist film grain changes that cause the stresses. GBS implants the elements into the thin film at desired depths, but above the film-substrate interface, sufficient to prevent or lessen destructive grain growth. GBS provides for structural film stability required during severe thermal cycles that occur during subsequent processing of semiconductor devices.
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Hu Yong-Jun
Pan Pai Hung
Micron Tecnology, Inc.
Nguyen Ha Tran
Niebling John F.
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