Sputter target and method of using a sputter target

Details Sputter target and method of using a sputter target Sputter target and method of using a sputter target

2005-02-08

2005-02-08

VerSteeg, Steven (Department: 1753)

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C204S298120, C204S298130

Reexamination Certificate

active

06852201

ABSTRACT:
A sputtering target used in carrying out a PVD coating process where the sputtering target is sputtered by bombardment with gas atoms and a layer consisting of several metallic elements is deposited onto a substrate, the sputtering target being a plate made of a metal used for building up the layer, and with the other metals used for building up the layer being present at least partially in the form of plugs, which are inserted in holes in the plate, the shape of the free surfaces of the plugs being selected in such a way that the sputtering rate for each metal used in the sputtering process can be set according to the desired composition of the layer being applied.

REFERENCES:
patent: 4610774 (1986-09-01), Sakata et al.
patent: 4915810 (1990-04-01), Kestigian et al.
patent: 465699 (1928-09-01), None
patent: 29 14618 (1980-10-01), None
patent: 8-158047 (1996-06-01), None
EPO Abstract 61291969, Dec. 22, 1986.*
English translation of JP 61-291969.*
Patent Abstracts of Japan vol. 011, no. 163 (C-424), May 26, 1987 & JP 61 291969 A (Matsushita Electric Ind Co Ltd), Dec. 22, 1986.
Patent Abstracts of Japan, vol. 011, no. 185 (C-428), Jun. 13, 1987 & JP 62 007852 A (Toshiba Corp), Jan. 14, 2987.
Patent Abstracts of Japan, vol. 006, no. 122 (C-112), Jul. 7, 1982 & JP 57 047871 A (Hitachi Ltd), Mar. 18, 1982.
Z. Liu et al.. “Oxidation behavior of nanocrystalline Fe-Ni-Cr-Al alloy coatings”, Materials Science and Technology, Dec. 1999, pp. 1447-1450. vol. 15.

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