Sputter source, sputtering device, and sputtering method

Details Sputter source, sputtering device, and sputtering method Sputter source, sputtering device, and sputtering method

2004-05-19

2008-03-25

McDonald, Rodney G. (Department: 1795)

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

C204S298200, C204S298230, C204S298260, C204S298140

Reexamination Certificate

active

07347919

ABSTRACT:
According to the invention, when targets are sputtered, each of them moves with respect to a substrate; and therefore, the entire area of the substrate is opposed to the targets during sputtering, so that a film of homogeneous quality can be formed on the surface of the substrate. During the sputtering, not only the targets but also magnetic field forming devices are moved relative to the targets, and therefore, a large area of the targets can be sputtered. In addition, when the magnetic field forming devices are also moved with respect to the substrate, the region of the target which is highly sputtered, moves with respect to the substrate, so that the thickness distribution of the film formed on the substrate can be even more uniform.

REFERENCES:
patent: 5399253 (1995-03-01), Grunenfelder
patent: 6093293 (2000-07-01), Haag et al.
patent: 6284106 (2001-09-01), Haag et al.
patent: 63-171880 (1988-07-01), None
patent: 9-125242 (1997-05-01), None
patent: 11-189873 (1999-07-01), None
patent: 2000-333439 (2000-04-01), None
Machine Translation of 2000-104167.

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