Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering
Patent
1981-04-21
1982-09-28
O'Keefe, Veronica
Chemistry: electrical and wave energy
Apparatus
Coating, forming or etching by sputtering
204192C, 204192E, C23C 1500
Patent
active
043517145
ABSTRACT:
A sputter-etching device has a hollow electrode with an internal space in which gas plasma is formed and an opening which is confronted with the inner wall of a vacuum chamber to provide an electric discharge gap therebetween. An object to be processed is placed on the side of the vacuum chamber instead of the side of the electrode. The sputter-etching device is combined with a sputtering device so that immediately after being cleaned by sputter-etching, the object is subjected to sputtering.
REFERENCES:
patent: 3180751 (1965-04-01), Law
patent: 3502562 (1970-03-01), Humphries
patent: 4062319 (1977-12-01), Roth et al.
patent: 4126530 (1978-11-01), Thornton
patent: 4204942 (1980-05-01), Chabroudi
patent: 4265730 (1981-05-01), Hirose et al.
patent: 4268374 (1981-05-01), Lepselter
patent: 4274936 (1981-06-01), Love
Robert W. Berry et al., Thin Film Technology, Van Nostrand Reinhold Co., New York, 1968 pp. 200-201.
Kabushiki Kaisha Tokuda Seisakusho
O'Keefe Veronica
LandOfFree
Sputter-etching device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Sputter-etching device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sputter-etching device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-398762