Sputter-etching device

Chemistry: electrical and wave energy – Apparatus – Coating – forming or etching by sputtering

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

204192C, 204192E, C23C 1500

Patent

active

043517145

ABSTRACT:
A sputter-etching device has a hollow electrode with an internal space in which gas plasma is formed and an opening which is confronted with the inner wall of a vacuum chamber to provide an electric discharge gap therebetween. An object to be processed is placed on the side of the vacuum chamber instead of the side of the electrode. The sputter-etching device is combined with a sputtering device so that immediately after being cleaned by sputter-etching, the object is subjected to sputtering.

REFERENCES:
patent: 3180751 (1965-04-01), Law
patent: 3502562 (1970-03-01), Humphries
patent: 4062319 (1977-12-01), Roth et al.
patent: 4126530 (1978-11-01), Thornton
patent: 4204942 (1980-05-01), Chabroudi
patent: 4265730 (1981-05-01), Hirose et al.
patent: 4268374 (1981-05-01), Lepselter
patent: 4274936 (1981-06-01), Love
Robert W. Berry et al., Thin Film Technology, Van Nostrand Reinhold Co., New York, 1968 pp. 200-201.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Sputter-etching device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sputter-etching device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sputter-etching device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-398762

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.