Sputter etching chamber having a gas baffle with improved unifor

Details Sputter etching chamber having a gas baffle with improved unifor Sputter etching chamber having a gas baffle with improved unifor

1998-05-20

2000-02-29

Nguyen, Nam

Chemistry: electrical and wave energy

Processes and products

Coating, forming or etching by sputtering

20419232, 20429807, 20429811, 20429831, 20429833, 29592, C23C 1434

Patent

active

060305088

ABSTRACT:
The uniformity of material removal, as well as contamination due to deposited particulate matter, has been reduced in single wafer sputter-etchers by providing an improved gas baffle. Said gas baffle presents a smooth surface to the incoming sputtering gas so that it disperses uniformly throughout the sputtering chamber, thereby avoiding local fluctuations in pressure which, in turn, can lead to local differences in material removal rate as well as to particulate contamination of the surface that is being etched. The design of the baffle is described along with a method for attaching it to the inside of the sputtering shield.

REFERENCES:
patent: 3661761 (1972-05-01), Koenig
patent: 4647338 (1987-03-01), Visser
patent: 4718976 (1988-01-01), Fujimura
patent: 5266153 (1993-11-01), Thomas
patent: 5277751 (1994-01-01), Ogle
patent: 5423971 (1995-06-01), Arnold et al.
patent: 5556474 (1996-09-01), Otani et al.
patent: 5643394 (1997-07-01), Maydan et al.
patent: 5783023 (1998-07-01), Oh et al.

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