Spot-to-spot stitching in electron beam lithography utilizing sq

Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Electron beam imaging

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430396, 430942, G03C 500

Patent

active

06090528&

ABSTRACT:
The invention relates to the field of electron beam lithography. More particularly, the invention relates to shaped beam lithography for generating variable-shaped spots on photoresist for use in integrated circuit manufacturing processes. According to an aspect of the invention, an electron beam lithography method is provided, having the steps of generating an electron beam and directing it through a first square aperture in a first lamina, the first square aperture having a first serrated edge. According to a further aspect of the invention, the beam emanating from the first square aperture in the first lamina is focused onto a second square aperture in a second lamina having a second serrated edge. The spot generated has a subresolution edge zone induced at least in part by the first serrated edge and/or the second serrated edge.

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patent: 5895736 (1999-04-01), Nakajima

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