Split gate type flash memory device and method for...

Details Split gate type flash memory device and method for... Split gate type flash memory device and method for...

2007-07-03

2007-07-03

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE29129, C257SE29300, C257SE21422, C257SE21680

Reexamination Certificate

active

11153392

ABSTRACT:
A split gate type flash memory device and a method of manufacturing the split gate type flash memory device are disclosed. The split gate type flash memory device includes a silicon epitaxial layer formed in an active region of a bulk silicon substrate and a disturbance-preventing insulating film formed in the bulk silicon substrate between a source region and a drain region of the device. According to selected embodiments of the invention, the disturbance-preventing insulating film is formed using a Shallow Trench Isolation (STI) forming process.

REFERENCES:
patent: 4998220 (1991-03-01), Eitan et al.
patent: 6093951 (2000-07-01), Burr
patent: 6121666 (2000-09-01), Burr
patent: 6124609 (2000-09-01), Hsieh et al.
patent: 6157058 (2000-12-01), Ogura
patent: 6214741 (2001-04-01), Lee
patent: 6323085 (2001-11-01), Sandhu et al.
patent: 7166888 (2007-01-01), Bhattacharyya
patent: 2006/0019444 (2006-01-01), Lu et al.
patent: 11-214546 (1999-08-01), None
patent: 1998-048947 (1998-09-01), None

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