Split-gate thin film storage NVM cell with reduced...

Details Split-gate thin film storage NVM cell with reduced... Split-gate thin film storage NVM cell with reduced...

2007-02-06

2010-10-12

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S267000, C257SE21679

Reexamination Certificate

active

07811886

ABSTRACT:
A semiconductor process and apparatus are disclosed for forming a split-gate thin film storage NVM device (10) by forming a select gate structure (3) on a first dielectric layer (2) over a substrate (1); forming a control gate structure (6) on a second dielectric layer (5) having embedded nanocrystals (15, 16) so that the control gate (6) is adjacent to the select gate structure (3) but separated therefrom by a gap (8); forming a floating doped region (4) in the substrate (1) below the gap (8) formed between the select gate structure and control gate structure; and forming source/drain regions (11, 12) in the substrate to define a channel region that includes the floating doped region (4).

REFERENCES:
patent: 5338952 (1994-08-01), Yamauchi
patent: 6177318 (2001-01-01), Ogura et al.
patent: 6248633 (2001-06-01), Ogura et al.
patent: 6518619 (2003-02-01), Verhaar et al.
patent: 6828618 (2004-12-01), Baker, Jr. et al.
patent: 2005/0085039 (2005-04-01), Yasui et al.

Affiliated with

Also associated with

Rating

Split-gate thin film storage NVM cell with reduced... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Split-gate thin film storage NVM cell with reduced..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Split-gate thin film storage NVM cell with reduced... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4237124