Split gate non-volatile memory devices and methods of...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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Details

C257S321000, C257SE27103, C257SE29304

Reexamination Certificate

active

07602008

ABSTRACT:
Non-volatile memory devices and methods for fabricating non-volatile memory devices are disclosed. More specifically, split gate memory devices are provided having frameworks that provide increased floating gate coupling ratios, thereby enabling enhanced programming and erasing efficiency and performance.

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patent: 6635533 (2003-10-01), Chang et al.
patent: 7176083 (2007-02-01), Shyu et al.
patent: 7214589 (2007-05-01), Liu et al.
patent: 7265411 (2007-09-01), Kang
patent: 7315057 (2008-01-01), Jeon et al.

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