Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-12-14
2009-10-13
Wilczewski, M. (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S321000, C257SE27103, C257SE29304
Reexamination Certificate
active
07602008
ABSTRACT:
Non-volatile memory devices and methods for fabricating non-volatile memory devices are disclosed. More specifically, split gate memory devices are provided having frameworks that provide increased floating gate coupling ratios, thereby enabling enhanced programming and erasing efficiency and performance.
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Choi Yong-Suk
Han Jeong-Uk
Jeon Hee Seog
Kang Sung-Taeg
Kwon Hyok-Ki
F. Chau & Associates LLC.
Samsung Electronics Co,. Ltd.
Thomas Toniae M
Wilczewski M.
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