Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-08-18
1999-06-15
Whitehead, Jr., Carl
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257314, 257316, 257336, 257344, 257408, H01L 29788
Patent
active
059124873
ABSTRACT:
A MOSFET device on a lightly doped semiconductor substrate comprises forming a dielectric layer on the substrate, a floating gate layer over the dielectric layer, a sacrificial layer on the floating gate layer, and a split-gate channel mask patterned with openings over the sacrificial layer.
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Samachiga et al., "128L Flash EEPROM Using Double-Poly-Silicon Technology," IEEE Solid State Circuit Vol. SC-22, No. 5, Oct. 1987, pp. 676-683.
Jr. Carl Whitehead
United Microelectronics Corp.
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