Spin-transfer based MRAM using angular-dependent selectivity

Static information storage and retrieval – Systems using particular element – Magnetoresistive

Reexamination Certificate

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C365S171000, C365S173000

Reexamination Certificate

active

07149106

ABSTRACT:
A magnetic random access memory (“MRAM”) device can be selectively written using spin-transfer reflection mode techniques. Selectivity of a designated MRAM cell within an MRAM array is achieved by the dependence of the spin-transfer switching current on the relative angle between the magnetizations of the polarizer element and the free magnetic element in the MRAM cell. The polarizer element has a variable magnetization that can be altered in response to the application of a current, e.g., a digit line current. When the magnetization of the polarizer element is in the natural default orientation, the data in the MRAM cell is preserved. When the magnetization of the polarizer element is switched, the data in the MRAM cell can be written in response to the application of a relatively low write current.

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patent: 6603677 (2003-08-01), Redon et al.
patent: 6865109 (2005-03-01), Covington
F.B. Mancoff, R.W. Dave, N.D. Rizzo, T.C. Eschrich, B.N. Engel, S. Tehrani; Angular Dependence of Spin-Transfer Switching in a Magnetic Nanostructure; Applied Physics Letters; vol. 83; Nov. 8, 2003; 3 pages.
E.B. Meyers, D.C. Ralph, J.A. Katine, R.N. Louie, R.A. Buhrman; Current-Induced Switching of Domains in Magnetic Multiplayer Devices; Science; vol. 285; Aug. 6, 1999; 4 pages.

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