Static information storage and retrieval – Systems using particular element – Magnetoresistive
Reexamination Certificate
2006-12-12
2006-12-12
Dinh, Son T. (Department: 2824)
Static information storage and retrieval
Systems using particular element
Magnetoresistive
C365S171000, C365S173000
Reexamination Certificate
active
07149106
ABSTRACT:
A magnetic random access memory (“MRAM”) device can be selectively written using spin-transfer reflection mode techniques. Selectivity of a designated MRAM cell within an MRAM array is achieved by the dependence of the spin-transfer switching current on the relative angle between the magnetizations of the polarizer element and the free magnetic element in the MRAM cell. The polarizer element has a variable magnetization that can be altered in response to the application of a current, e.g., a digit line current. When the magnetization of the polarizer element is in the natural default orientation, the data in the MRAM cell is preserved. When the magnetization of the polarizer element is switched, the data in the MRAM cell can be written in response to the application of a relatively low write current.
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F.B. Mancoff, R.W. Dave, N.D. Rizzo, T.C. Eschrich, B.N. Engel, S. Tehrani; Angular Dependence of Spin-Transfer Switching in a Magnetic Nanostructure; Applied Physics Letters; vol. 83; Nov. 8, 2003; 3 pages.
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Engel Bradley N.
Mancoff Frederick B.
Rizzo Nicholas D.
Dinh Son T.
Freescale Semiconductor Inc.
Ingrassia,Fisher &Lorenz
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