Spin torque transfer MRAM device

Details Spin torque transfer MRAM device Spin torque transfer MRAM device

2007-05-22

2009-08-11

Hoang, Huan (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S171000, C365S173000

Reexamination Certificate

active

07573736

ABSTRACT:
The present disclosure provides a magnetic memory element. The memory element includes a magnetic tunnel junction (MTJ) element and an electrode. The electrode includes a pinning layer, a pinned layer, and a non-magnetic conductive layer. In one embodiment, the MTJ element includes a first surface having a first surface area, and the electrode includes a second surface. In the embodiment, the second surface of the electrode is coupled to the first surface of the MTJ element such that an interface area is formed and the interface area is less than the first surface area.

REFERENCES:
patent: 6714444 (2004-03-01), Huai et al.
patent: 6950290 (2005-09-01), Hayashi et al.
patent: 7242045 (2007-07-01), Nguyen et al.
patent: 7286395 (2007-10-01), Chen et al.
patent: 2007/0019341 (2007-01-01), Mizuno et al.

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