Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-03-22
2010-02-02
Wilczewski, M. (Department: 2822)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S287000, C438S289000, C438S513000, C438S590000, C438S593000, C257S295000, C257S421000, C257S424000, C257SE29164, C365S200000, C365S173000, C365S170000, C365S158000, C428S200000, C428S836100
Reexamination Certificate
active
07655517
ABSTRACT:
An embodiment of the invention is a transistor formed in part by a ferromagnetic semiconductor with a sufficiently high ferromagnetic transition temperature to coherently amplify spin polarization of a current. For example, an injected non-polarized control current creates ferromagnetic conditions within the transistor base, enabling a small spin-polarized signal current to generate spontaneous magnetization of a larger output current.
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Bourianoff George I.
Nikonov Dmitri E.
Blakely , Sokoloff, Taylor & Zafman LLP
Green Telly D
Intel Corporation
Wilczewski M.
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