Spin-on-glass etchback planarization process using an oxygen pla

Details Spin-on-glass etchback planarization process using an oxygen pla Spin-on-glass etchback planarization process using an oxygen pla

1995-09-18

1997-10-21

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

1566531, 216 38, 437228, 437231, 437238, H01L 21306

Patent

active

056792115

ABSTRACT:
A method for improving the etch back uniformity of a SOG layer by removing an etch back resistant polymer which builds up on the SOG layer during the etch back process. According to the present invention, a first insulation layer and a SOG layer are formed on a substrate. The SOG layer is partially etched back in a fluorocarbon containing plasma which forms a polymer residue on the SOG layer surface. The SOG layer is then treated in situ with an oxygen containing plasma to remove any of the etch resistant polymer residue on the SOG layer surface. The above in situ etch and oxygen containing plasma treatment of the spin-on-glass layer are repeated until the SOG layer is etched back to the desired thickness.

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