Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Field effect device in non-single crystal – or...
Patent
1995-08-31
1997-06-17
Whitehead, Jr., Carl
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Field effect device in non-single crystal, or...
257 67, 257 69, 257213, 257217, H01L 2976, H01L 31036, H01L 3142
Patent
active
056400233
ABSTRACT:
The cross-sectional area of a thin-film transistor (TFT) is decreased in order to minimize bitline to supply leakage of the TFT. This is accomplished by utilizing a spacer etch process to manufacture a TFT having a very narrow and thin channel in a controllable manner. The spacer dimensions of the TFT may be adjusted by simply modifying the thicknesses of the poly gate and the channel poly. The channel thickness is limited by the thickness of the deposited channel polysilicon which may be as thin as approximately 300 .ANG. to 500 .ANG., and the channel width of the TFT corresponds to the height of the spacer etched along the polysilicon gate of the device which may be as small as approximately 0.15 to 0.25 .mu.m.
REFERENCES:
patent: 4554572 (1985-11-01), Chatterjee
Balasinski Artur P.
Huang Kuei-Wu
Galanthay Theodore E.
Jorgenson Lisa K.
Jr. Carl Whitehead
Larson Renee M.
SGS-Thomson Microelectronics Inc.
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