Spacer structure as transistor gate

Details Spacer structure as transistor gate Spacer structure as transistor gate

1997-05-16

2000-09-26

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438304, 438305, 438596, H01L 21336

Patent

active

061241741

ABSTRACT:
A semiconductor process includes forming a spacer support structure on an upper surface of a semiconductor substrate. The semiconductor substrate includes a channel region that is laterally displaced between first and second source/drain regions. A. The spacer support structure includes a substantially vertical sidewall that is laterally aligned over a boundary between the first source/drain region and the channel region of the semiconductor substrate. A gate dielectric is then grown and a transistor gate fabricated by forming a first spacer structure on the sidewall of the spacer support structure. The first spacer structure includes a substantially vertical first sidewall in contact with the spacer support structure sidewall and further includes a second sidewall that is laterally aligned over a boundary between the channel region and the second source/drain region of the semiconductor substrate. The spacer support structure is then removed and source/drain impurity distributions are introduced into the source/drain regions of the semiconductor substrate.

REFERENCES:
patent: 4419809 (1983-12-01), Riseman et al.
patent: 4442589 (1984-04-01), Doo et al.
patent: 4460413 (1984-07-01), Hirata et al.
patent: 4597827 (1986-07-01), Nishitani et al.
patent: 5041895 (1991-08-01), Contiero et al.
patent: 5202272 (1993-04-01), Hsieh et al.
patent: 5283449 (1994-02-01), Ooka
patent: 5373476 (1994-12-01), Jeon
patent: 5445107 (1995-08-01), Roth et al.
patent: 5468666 (1995-11-01), Chapman
patent: 5576570 (1996-11-01), Ohsawa et al.
patent: 5679971 (1997-10-01), Tamba et al.
XP000671026 IBM Technical Disclosure, vol. 30, No. 3, Aug. 1987, pp. 1136-1137.
XP000120044 IBM Technical Disclosure, vol. 33, No. 1A, Jun. 1990, pp. 75-77.
International Search Report for PCT/US 98/06889 mailed Jul. 29, 1998.

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