Spacer formation for graded dopant profile having a triangular g

Details Spacer formation for graded dopant profile having a triangular g Spacer formation for graded dopant profile having a triangular g

1997-12-09

2000-05-16

Trinh, Michael

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438303, 438595, 438695, H01L 21336

Patent

active

060636793

ABSTRACT:
The formation of a spacer for a graded dopant profile having a triangular geometry is disclosed. In one embodiment, a method has three steps. In the first step, a gate is formed on a substrate, the gate having two edges. In the second step, at least one spacer is formed, where each spacer is adjacent to an edge of the gate and has a triangular geometry. In the third step, an ion implantation is applied to form a graded lightly doped region within the substrate underneath each spacer, the region corresponding to the triangular geometry of the spacer.

REFERENCES:
patent: 4755479 (1988-07-01), Miura
patent: 5234852 (1993-08-01), Liou
patent: 5685950 (1997-11-01), Sato
patent: 5723893 (1998-03-01), Yu et al.
patent: 5800621 (1998-09-01), Redeker et al.
patent: 5872058 (1999-02-01), Van Cleemput et al.
patent: 5874317 (1999-02-01), Stolmeijer

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