Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1997-12-09
2000-05-16
Trinh, Michael
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438303, 438595, 438695, H01L 21336
Patent
active
060636793
ABSTRACT:
The formation of a spacer for a graded dopant profile having a triangular geometry is disclosed. In one embodiment, a method has three steps. In the first step, a gate is formed on a substrate, the gate having two edges. In the second step, at least one spacer is formed, where each spacer is adjacent to an edge of the gate and has a triangular geometry. In the third step, an ion implantation is applied to form a graded lightly doped region within the substrate underneath each spacer, the region corresponding to the triangular geometry of the spacer.
REFERENCES:
patent: 4755479 (1988-07-01), Miura
patent: 5234852 (1993-08-01), Liou
patent: 5685950 (1997-11-01), Sato
patent: 5723893 (1998-03-01), Yu et al.
patent: 5800621 (1998-09-01), Redeker et al.
patent: 5872058 (1999-02-01), Van Cleemput et al.
patent: 5874317 (1999-02-01), Stolmeijer
Gardner Mark I.
Hause Fred N.
May Charles E.
Advanced Micro Devices , Inc.
Trinh Michael
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