Source side injection storage device with control gates...

Details Source side injection storage device with control gates... Source side injection storage device with control gates...

2008-05-27

2008-05-27

Pham, Thanhha S. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S201000, C438S211000, C438S267000, C257SE21179, C257SE21679

Reexamination Certificate

active

11170446

ABSTRACT:
A storage device has a two bit cell in which the select electrode is nearest the channel between two storage layers. Individual control electrodes are over individual storage layers. Adjacent cells are separated by a doped region that is shared between the adjacent cells. The doped region is formed by an implant in which the select gates of adjacent cells are used as a mask. This structure provides for reduced area while retaining the ability to perform programming by source side injection.

REFERENCES:
patent: 6133098 (2000-10-01), Ogura et al.
patent: 6383872 (2002-05-01), Kadosh et al.

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