Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1999-04-23
2000-07-25
Booth, Richard
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
257322, H01L 218247
Patent
active
060936088
ABSTRACT:
A split gate P-channel flash memory cell and method of forming a split gate P-channel flash memory cell which avoids of high erasing voltage, reverse tunneling during programming, drain disturb and over erase problems, and permits shrinking the cell dimensions. The control gate has a concave top surface which intersects with the sidewalls to form a sharp edge. The cell is programmed by charging the floating gate with electrons by means of hot electron injection from the channel into the floating gate. The cell is erased by discharging the excess electrons from the floating gate into the control gate using Fowler-Nordheim tunneling. The sharp edge at the intersection of the concave top surface and the sidewalls of the floating gate produces a high electric field between the control gate and the floating gate to accomplish the Fowler-Nordheim tunneling with only moderate voltage differences between the floating gate and control gate. The P-channel flash memory cell has a higher impact ionization rage for creating hot electrons so that the distance between the source and drain junctions and the length of the floating gate can be kept small thereby permitting the dimensions of the flash memory cell to be shrunk.
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Hsieh Chia-Ta
Kuo Di-Son
Lin Yai-Fen
Sung Hung-Cheng
Ackerman Stephen B.
Booth Richard
Prescott Larry J.
Saile George O.
Taiwan Semiconductor Manufacturing Company
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