Source/drain stressor and method therefor

Details Source/drain stressor and method therefor Source/drain stressor and method therefor

2007-02-28

2009-08-11

Garber, Charles D. (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S274000, C438S300000, C438S301000, C438S303000, C438S305000, C257SE21177, C257SE21290

Reexamination Certificate

active

07572706

ABSTRACT:
A method for forming a semiconductor device is provided. The method includes forming a gate structure overlying a substrate. The method further includes forming a sidewall spacer adjacent to the gate structure. The method further includes performing an angled implant in a direction of a source side of the semiconductor device. The method further includes annealing the semiconductor device. The method further includes forming recesses adjacent opposite ends of the sidewall spacer in the substrate to expose a first type of semiconductor material. The method further includes epitaxially growing a second type of semiconductor material in the recesses, wherein the second type of semiconductor material has a lattice constant different from a lattice constant of the first type of semiconductor material to create stress in a channel region of the semiconductor device.

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