Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Plural recrystallized semiconductor layers
Reexamination Certificate
2008-04-30
2010-11-23
Monbleau, Davienne (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Plural recrystallized semiconductor layers
C257S001000, C257S009000, C257SE21223, C257SE21207
Reexamination Certificate
active
07838887
ABSTRACT:
A semiconductor device system, structure, and method of manufacture of a source/drain to retard dopant out-diffusion from a stressor are disclosed. An illustrative embodiment comprises a semiconductor substrate, device, and method to retard sidewall dopant out-diffusion in source/drain regions. A semiconductor substrate is provided with a gate structure, and a source and drain on opposing sides of the gate structure. Recessed regions are etched in a portion of the source and drain. Doped stressors are embedded into the recessed regions. A barrier dopant is incorporated into a remaining portion of the source and drain.
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Chang Hsun
Chen Ching-Yi
Lin Li-Te S.
Nieh Chun-Feng
Woon Wei-Yen
Monbleau Davienne
Mulcare Shweta
Slater & Matsil L.L.P.
Taiwan Semiconductor Manufacturing Company , Ltd.
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