Radiant energy – Ion generation – Arc type
Reexamination Certificate
2006-09-05
2006-09-05
Lee, John R. (Department: 2881)
Radiant energy
Ion generation
Arc type
C250S42300F, C250S429000, C250S427000, C315S111810
Reexamination Certificate
active
07102139
ABSTRACT:
An ion implanter has a source arc chamber including a conductive end wall at a repeller end of the arc chamber, the end wall having a central portion surrounding an opening. A ceramic insulator is secured to an outer surface of the end wall, such as by peripheral screw threads engaging mating threads at the periphery of a recessed area of the end wall. A conductive repeller has a narrow shaft secured to the insulator and extending through the end wall opening, and a body disposed within the source arc chamber adjacent to the end wall. The end wall, insulator and repeller are configured to form a continuous vacuum gap between the central portion of the end wall and (i) the repeller body, (ii) the repeller shaft, and (iii) the insulator. The insulator interior surface can have a ridged cross section.
REFERENCES:
patent: 5517077 (1996-05-01), Bright et al.
patent: 5763890 (1998-06-01), Cloutier et al.
patent: 5886355 (1999-03-01), Bright et al.
patent: 5920076 (1999-07-01), Burgin et al.
patent: 6768121 (2004-07-01), Horsky et al.
patent: 2005/0173651 (2005-08-01), Goldberg et al.
Cobb Eric R.
Klos Leo V.
Low Russell J.
Olson Joseph C.
Hashmi Zia R.
Lee John R.
Varian Semiconductor Equipment Associates Inc.
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