Sonos device and methods of manufacturing the same

Details Sonos device and methods of manufacturing the same Sonos device and methods of manufacturing the same

2007-04-03

2007-04-03

Owens, Douglas W. (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S324000, C438S216000, C438S261000

Reexamination Certificate

active

10948966

ABSTRACT:
Silicon-oxide-nitride-oxide-silicon (SONOS) devices and methods of manufacturing the same are provided. According to one aspect, a SONOS device includes a semiconductor substrate having a first surface, a second surface of lower elevation than the first surface, and a third surface perpendicular and between the first and second surfaces; a tunnel dielectric layer on the semiconductor substrate; a charge trapping layer in a form of a spacer on the tunnel dielectric layer on the third surface; a charge isolation layer on the tunnel dielectric layer, which covers the charge trapping layer; a gate that extends over a portion of the first surface, over a portion of the second surface, and is adjacent to a portion of the third surface of the semiconductor substrate on the charge isolation layer; a first impurity region formed below the first surface and near the gate; and a second impurity region formed below the second surface, opposite the first impurity region.

REFERENCES:
patent: 5408115 (1995-04-01), Chang
patent: 5838041 (1998-11-01), Sakagami et al.
patent: 7050330 (2006-05-01), Forbes

Affiliated with

Also associated with

Rating

Sonos device and methods of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Sonos device and methods of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Sonos device and methods of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3789717