Coating processes – Direct application of electrical – magnetic – wave – or... – Plasma
Reexamination Certificate
2005-10-11
2005-10-11
Chen, Bret (Department: 1762)
Coating processes
Direct application of electrical, magnetic, wave, or...
Plasma
C427S578000, C427S099300, C438S787000
Reexamination Certificate
active
06953608
ABSTRACT:
A HDP CVD process for depositing a USG liner followed by a FSG dielectric layer on a metal line pattern is described. The substrate is heated in a chamber with a plasma comprised of Ar and O2. A USG liner is deposited in two steps wherein the first step is without an RF bias and the second step is with a moderate RF bias that does not damage the metal lines or an anti-reflective coating on the metal. The moderate RF bias is critical in forming a sputtering component that redeposits USG to form more uniform sidewalls and better coverage at top corners of metal lines. The USG deposition process has a good gap filling capability and significantly reduces device failure rate by preventing corrosion of metal lines during subsequent thermal process cycles. The method also includes a PECVD deposited FSG layer that is planarized to complete an IMD layer.
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Chang Yu-Min
Chen Jo-Wei
Leu Pong-Hsiung
Ni Chyi-Tsong
Tsai Fang-Wen
Chen Bret
Taiwan Semiconductor Manufacturing Co. Ltd.
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