Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-23
2011-08-23
Smith, Matthew (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S432000, C257S440000, C257SE33073, C257SE33060
Reexamination Certificate
active
08004028
ABSTRACT:
A solid state imaging device including photoelectric conversion devices which are arranged two-dimensionally; a color filter including a plurality of picture elements, each disposed corresponding to each of the photoelectric conversion devices; and a plurality of transfer lenses each disposed corresponding to each of the picture elements, formed of a thermoset acrylic resin, and formed directly on each of the picture elements, wherein a gap between neighboring transfer lenses is not more than 0.035 μm, and a contact length between neighboring transfer lenses is within the range of 3-80% of the pitch of the plurality of transfer lenses.
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Fukuyoshi Kenzo
Ishimatsu Tadashi
Nakao Mitsuhiro
Ogata Keisuke
Uchibori Akiko
Jefferson Quovaunda V
Smith Matthew
Toppan Printing Co. Ltd.
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