Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-08-01
2006-08-01
Crane, Sara (Department: 2811)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S292000, C257S461000, C257S465000, C438S073000
Reexamination Certificate
active
07084443
ABSTRACT:
A solid-state image pickup device includes, in a substrate, a plurality of photoelectric conversion regions for subjecting incoming light to photoelectric conversion, a reading gate for reading a signal charge from the photoelectric conversion regions, and a transfer register (vertical register) for transferring the signal charge read by the reading gate. Therein, a groove is formed on the surface side of the substrate, and the transfer register and the reading gate are formed at the bottom part of the groove. With such a structure, in the solid-state image pickup device, reduction can be achieved for the smear characteristics, a reading voltage, noise, and others.
REFERENCES:
patent: 6891243 (2005-05-01), Adachi et al.
Abe Hideshi
Karasawa Nobuhiro
Kitano Yoshiaki
Kuroiwa Jun
Ohki Hiroaki
Crane Sara
Depke Robert J.
Trexler, Bushnell Giangiorgi, Blackstone & Marr, Ltd.
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