Solid state device fabrication method including a surface treatm

Details Solid state device fabrication method including a surface treatm Solid state device fabrication method including a surface treatm

1991-09-06

1994-05-24

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG76, H01L 2126

Patent

active

053148398

ABSTRACT:
To improve the characteristics of oxides and other insulators formed by conventional techniques, particularly to improve its density, relative dielectric constant, resistance to acid, resistance to reduction and other characteristics, and to provide solid state devices or socharacteristics, the surfaces of the silicon oxide insulator, or the like, is irradiated with electrically neutral particles.

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patent: 4818721 (1989-04-01), Wang
patent: 4868104 (1989-09-01), Yonehara
patent: 4902647 (1990-02-01), Chutjian
D. V. McCaughan, "Effects of bombardment by low-energy neutral particles on silicon dioxide films", J. Appl. Phys. 51(1) Jan. 1980, pp. 299-304.
S. Wolf, Silicon Processing for the VLSI Era Volume 2: Process Integration, Lattice Press, Sunset Beach, CA (1990) pp. 279-283.

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