Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-03-15
2005-03-15
Nelms, David (Department: 2818)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S171000, C438S210000, C438S238000, C361S523000, C361S524000, C029S025030
Reexamination Certificate
active
06867088
ABSTRACT:
To provide a solid electrolytic capacitor where solid electrolyte is formed at the cut end part and at the masking part to a larger thickness than in other parts, where the adhesion of the solid electrolyte formed on the valve acting metal oxide film is improved, and whereby the capacitor is highly stabilized in various basic properties such as capacitance, dielectric loss (tan δ), leakage current and short circuit defective ratio and also in the reflow soldering heat resistance and moisture resistance load characteristics.These solid electrolytic capacitor can be obtained by forming electrically conducting polymer on a dielectric film by specifying time for dipping of the surface of a valve actiong metal porous body with a solution containing a monomer and with a solution containing an oxidizing agent, time for vaporization of the solvent of the solution containing a monomer, and polymerization conditions after dipping of the solution containing an oxidizing agent.
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International Search Report for PCT/JP01/02103 dated Jun. 12, 2001 (Japanese language).
Furuta Yuji
Monden Ryuji
Obata Tatsuo
Sakai Atsushi
Yamazaki Katsuhiko
Nelms David
Showa Denko K.K.
Tran Long
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