Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1996-11-05
1998-06-16
Picardat, Kevin
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438612, H01L 2144
Patent
active
057670102
ABSTRACT:
A method for fabricating solder bumps on a microelectronic device having contact pads includes the steps of depositing a titanium barrier layer on the device, forming an under bump metallurgy layer on the titanium barrier layer, and forming one or more solder bumps on the under bump metallurgy layer. The solder bump or bumps define exposed portions of the under bump metallurgy layer which are removed, and then the exposed portion of the titanium barrier layer is removed. The titanium barrier layer protects the underlying microelectronic device from the etchants used to remove the under bump metallurgy layer. The titanium layer also prevents the under bump metallurgy layer from forming a residue on the underlying microelectronic device. Accordingly, the titanium barrier layer allows the under bump metallurgy layer to be quickly removed without leaving residual matter thereby reducing the possibility of electrical shorts between solder bumps.
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Adema Gretchen Maerker
Kellam Mark D.
Mis Joseph Daniel
Rogers W. Boyd
MCNC
Picardat Kevin
LandOfFree
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