Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Plasma
Reexamination Certificate
2010-08-09
2011-11-22
Lee, Cheung (Department: 2812)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Plasma
C438S475000, C438S514000, C257SE21212, C257SE21319, C257SE21334
Reexamination Certificate
active
08062964
ABSTRACT:
The present disclosure passivates solar cell defects. Plasma immersion ion implantation (PIII) is used to repair the defects during or after making the solar cell. Hydrogen ion is implanted into absorption layer with different sums of energy to fill gaps of defects or surface recombination centers. Thus, solar cell defects are diminished and carriers are transferred with improved photovoltaic conversion efficiency.
REFERENCES:
patent: 2010/0240170 (2010-09-01), Sun
Ai Chi-Fong
Chen Yen-Yu
Liao Jyong-Fong
Liu Chee Wee
Tsai Wen-Fa
Atomic Energy Council
Lee Cheung
Lee & Hayes PLLC
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