Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-22
2011-03-22
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S680000, C438S786000, C438S787000, C257SE21170, C257SE21051, C257SE21058, C257SE21320, C257SE21259, C257SE21267, C257SE21278, C257SE21330, C257SE21332, C257SE21370
Reexamination Certificate
active
07910419
ABSTRACT:
A method for making a transistor with self-aligned gate and ground plane includes forming a stack, on one face of a semi-conductor substrate, the stack including an organometallic layer and a dielectric layer. The method also includes exposing a part of the organometallic layer, a portion of the organometallic layer different to the exposed part being protected from the electron beams by a mask, the shape and the dimensions of a section, in a plane parallel to the face of the substrate, of the gate of the transistor being substantially equal to the shape and to the dimensions of a section of the organometallic portion in said plane. The method also includes removing the exposed part, and forming dielectric portions in empty spaces formed by the removal of the exposed part of the organometallic layer, around the organometallic portion.
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French Preliminary Search Report, FR 08 53868, dated Feb. 13, 2009.
Coronel Philippe
Fenouillet-Beranger Claire
Commissariat a l''Energie Atomique
Nhu David
Nixon & Peabody LLP
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