Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-04-09
2010-10-05
Pham, Long (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S367000, C257S406000, C438S209000, C438S328000
Reexamination Certificate
active
07808039
ABSTRACT:
A semiconductor-on-insulator transistor device includes a source region, a drain region, a body region, and a source-side lateral bipolar transistor. The source region has a first conductivity type. The body region has a second conductivity type and is positioned between the source region and the drain region. The source-side lateral bipolar transistor includes a base, a collector, and an emitter. A silicide region connects the base to the collector. The emitter is the body region. The collector has the second conductivity type, and the base is the source region and is positioned between the emitter and the collector.
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Cai Jin
Johnson Jeffrey B.
Ning Tak H.
Robison Robert R.
Carey Rodriguez Greenberg & Paul LLP
Greenberg, Esq. Steven M.
International Business Machines - Corporation
Pham Long
Rao Steven H
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