SOI substrate, semiconductor substrate, and method for...

Details SOI substrate, semiconductor substrate, and method for... SOI substrate, semiconductor substrate, and method for...

2008-01-22

2008-01-22

Booth, Richard A. (Department: 2812)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

C257SE21561

Reexamination Certificate

active

10858646

ABSTRACT:
A method is for commercially producing by the SIMOX technique a perfect partial SOI structure avoiding exposure of a buried oxide film through the surface thereof and forming no step between an SOI region and a non-SOI region.A method for the production of an SOI substrate, includes forming on the surface of a semiconductor substrate made of a silicon single crystal a protective film designated to serve as a mask for ion implantation, forming an opening part of a stated pattern in the protective film, implanting oxygen ions into the surface of the semiconductor substrate in a direction not perpendicular thereto, and heat treating the semiconductor substrate thereby forming a buried oxide film in the semiconductor substrate, and inducing at the step of implanting oxygen ions into the surface of the semiconductor substrate the impartation of at least two angles to be formed between the projection of the flux of implantation of oxygen ions and a specific azimuth of the main body of the substrate.

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Patent Abstract of Japan Corresponding to JP2001-308025.
Patent Abstract of Japan Corresponding to JP2001-308172.

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