SOI substrate manufacturing method

Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Thinning of semiconductor substrate

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438938, H01L 2176

Patent

active

056656319

ABSTRACT:
A SOI substrate manufacturing method which corrects the warpage in the SOI substrate by varying the thickness of a semiconductor material layer additionally formed over the bonded combination of a semiconductor substrate and supporting substrate.

REFERENCES:
patent: 5032544 (1991-07-01), Ito et al.
patent: 5071785 (1991-12-01), Nakazato et al.
patent: 5238875 (1993-08-01), Ogino
patent: 5308776 (1994-05-01), Gotou
patent: 5494849 (1996-02-01), Iyer et al.

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