SOI substrate and a method for fabricating the same

Details SOI substrate and a method for fabricating the same SOI substrate and a method for fabricating the same

1996-08-30

1999-12-21

Nguyen, Tuan H.

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Total dielectric isolation

438404, 438455, 438457, 148DIG12, 148DIG135, H01L 2176

Patent

active

060048603

ABSTRACT:
An SOI substrate and a method for fabricating the same are provided to sharpen the departing angle at the circumference of the active substrate, and provide the active substrate with a uniform thickness. An attached wafer of the present invention is formed by processing the upper side of the base substrate so that its thickness increases from the center to the circumference, and attaching the active substrate to the processed side of the base substrate. The unattached portion of the attached wafer is removed. Then mirror processing is performed to provide the active substrate with a substantially uniform thickness along the processed side of the base substrate.

REFERENCES:
patent: 4017341 (1977-04-01), Suzuki et al.
patent: 5071785 (1991-12-01), Nakazato et al.
patent: 5258323 (1993-11-01), Sarma et al.
patent: 5308776 (1994-05-01), Gotou
patent: 5395788 (1995-03-01), Abe et al.
patent: 5668045 (1997-09-01), Golland et al.

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