Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-16
2011-08-16
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S349000, C257S350000, C257SE29151
Reexamination Certificate
active
07999320
ABSTRACT:
A doped contact region having an opposite conductivity type as a bottom semiconductor layer is provided underneath a buried insulator layer in a bottom semiconductor layer. At least one conductive via structure extends from an interconnect-level metal line through a middle-of-line (MOL) dielectric layer, a shallow trench isolation structure in a top semiconductor layer, and a buried insulator layer and to the doped contact region. The doped contact region is biased at a voltage that is at or close to a peak voltage in the RF switch that removes minority charge carriers within the induced charge layer. The minority charge carriers are drained through the doped contact region and the at least one conductive via structure. Rapid discharge of mobile electrical charges in the induce charge layer reduces harmonic generation and signal distortion in the RF switch. A design structure for the semiconductor structure is also provided.
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Botula Alan B.
Joseph Alvin J.
Nowak Edward J.
Shi Yun
Slinkman James A.
Canale Anthony J.
International Business Machines - Corporation
Ngo Ngan
Scully , Scott, Murphy & Presser, P.C.
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