SOI MOSFETS exhibiting reduced floating-body effects

Details SOI MOSFETS exhibiting reduced floating-body effects SOI MOSFETS exhibiting reduced floating-body effects

2007-01-16

2007-01-16

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S151000, C438S305000, C438S306000, C438S525000, C438S530000

Reexamination Certificate

active

10732277

ABSTRACT:
Disadvantages of the floating body of a SOI MOSFET are addressed by providing a pocket halo implant of indium beneath the gate and in the channel region of the semiconductor SOI layer of the MOSFET. Also provided is the method for fabricating the device.

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