SOI MOSFET with multi-sided source/drain silicide

Details SOI MOSFET with multi-sided source/drain silicide SOI MOSFET with multi-sided source/drain silicide

2005-11-08

2005-11-08

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S347000, C257S383000, C257S384000

Reexamination Certificate

active

06963114

ABSTRACT:
A microelectronic device including an insulator located over a substrate, a semiconductor feature and a contact layer. The semiconductor feature has a thickness over the insulator, a first surface opposite the insulator, and a sidewall spanning at least a portion of the thickness. The contact layer has a first member extending over at least a portion of the first surface and a second member spanning at least a portion of the sidewall.

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Hillenius, S.J., “MOSFETs and Related Devices”, Chapter 3 in “Modern Semiconductor Device Physics”, ed. Sze, S.M., John Wiley & Sons, New York 1998 (ISBN: 0-471-15237-4) (pp. 160-161).

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