SOI FET with source-side body doping

Details SOI FET with source-side body doping SOI FET with source-side body doping

2011-01-11

2011-01-11

Lee, Calvin (Department: 2892)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C257S344000

Reexamination Certificate

active

07867866

ABSTRACT:
An SOI FET device with improved floating body is proposed. Control of the body potential is accomplished by having a body doping concentration next to the source electrode higher than the body doping concentration next to the drain electrode. The high source-side dopant concentration leads to elevated forward leakage current between the source electrode and the body, which leakage current effectively locks the body potential to the source electrode potential. Furthermore, having the source-to-body junction capacitance larger than the drain-to-body junction capacitance has additional advantages in device operation. The device has no structure fabricated for the purpose of electrically connecting the body potential to other elements of the device.

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patent: 6596554 (2003-07-01), Unnikrishnan
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patent: 6861689 (2005-03-01), Burnett
patent: 7655983 (2010-02-01), Cai et al.
“Universal tunneling behavior in technology relevant P/N junction diodes”, Journal of Applied Physics, vol. 95 (10), pp. 5800-5812, (2004), P. Solomon, et. al.

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