SOI CMOS device having body extension for providing sidewall cha

Details SOI CMOS device having body extension for providing sidewall cha SOI CMOS device having body extension for providing sidewall cha

1991-10-21

1995-05-02

Gregory, Bernarr E.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257351, 257352, H01L 2300

Patent

active

H00014354

ABSTRACT:
An SOI/SOS thin film MOS mesa architecture has its body/channel region extended beyond the source and drain regions and the impurity concentration is increased at a selected portion (e.g. an end portion) of the extended body region, so as to provide both a body tie access location which enables the body/channel region to be terminated to a prescribed bias voltage (e.g. Vss), and a channel stop region that is effective to functionally interrupt a current leakage path or `parasitic` N-channel that may be induced along sidewall surface of the P-type material of the body/channel region. In another embodiment, ionizing radiation-induced inversion of the sidewalls of the P-type body/channel region is prevented by an asymmetric sidewall channel stop structure formed in opposite end portions of the source region.

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