Soft x-ray submicron lithography using multiply charged ions

Details Soft x-ray submicron lithography using multiply charged ions Soft x-ray submicron lithography using multiply charged ions

1992-08-18

1994-07-05

Porta, David P.

X-ray or gamma ray systems or devices

Specific application

Lithography

378 35, 378143, G21K 500

Patent

active

053274750

ABSTRACT:
Apparatus and methods for submicron lithography of semiconductor materials, circuits and other objects. A source of multiply charged ions is applied to a thin layer of electrically conductive material. The recombination of ions and free electrons in the layer produce soft x-ray radiation which used to irradiate an object. The object may include a semiconductor substrate, an x-ray sensitive resist, and an x-ray absorbing mask for forming semiconductor circuit devices. The soft x-rays are produced by careful selection of the type and energy of multiply charged ions and the thickness of the thin electro-conductive layer, which may be a light element metal.

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