Error detection/correction and fault detection/recovery – Pulse or data error handling – Error count or rate
Reexamination Certificate
2007-08-30
2010-06-22
Ton, David (Department: 2117)
Error detection/correction and fault detection/recovery
Pulse or data error handling
Error count or rate
C714S037000
Reexamination Certificate
active
07743289
ABSTRACT:
A first mathematical expression indicating a dependence of SER on an information storage node diffusion layer area at the same information storage node voltage Vn is derived with a use of a result of measuring a relationship between SER and the information storage node diffusion layer area of a storage circuit or an information holding circuit composed of MISFET using a plurality of information storage node voltages Vn as a parameter. Then, a second mathematical expression is derived from the measurement result by substituting a relationship indicating a dependence of SER on an information storage node voltage at the same information storage node diffusion layer area Sc into the first mathematical expression. SER can be calculated by substituting a desired information storage node diffusion layer area and a desired information storage node voltage of a storage circuit or an information holding circuit into the second mathematical expression.
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Furuta Hiroshi
Mizuguchi Ichiro
Monden Junji
Foley & Lardner LLP
NEC Electronics Corporation
Ton David
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