SnO2 ISFET device, manufacturing method, and methods and...

Details SnO2 ISFET device, manufacturing method, and methods and... SnO2 ISFET device, manufacturing method, and methods and...

2005-06-14

2005-06-14

Zarabian, Amir (Department: 2822)

Semiconductor device manufacturing: process

With measuring or testing

Electrical characteristic sensed

C438S049000, C324S438000, C324S760020

Reexamination Certificate

active

06905896

ABSTRACT:
A SnO2ISFET device and manufacturing method thereof. The present invention prepares SnO2as the detection membrane of an ISFET by sol-gel technology to obtain a SnO2ISFET. The present invention also measures the current-voltage curve for different pH and temperatures by a current measuring system. The temperature parameter of the SnO2ISFET is calculated according to the relationship between the current-voltage curve and temperature. In addition, the drift rate of the SnO2ISFET for different pH and hysteresis width of the SnO2ISFET for different pH loop are calculated by a constant voltage/current circuit and a voltage-time recorder to measure the gate voltage of the SnO2ISFET.

REFERENCES:
patent: 4397888 (1983-08-01), Yannopoulos et al.
patent: 4641249 (1987-02-01), Gion et al.
patent: 5078855 (1992-01-01), Mochizuki et al.
patent: 5911873 (1999-06-01), McCarron et al.
patent: 6387724 (2002-05-01), Walker
patent: 6531858 (2003-03-01), Chou et al.

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