Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Total dielectric isolation
Reexamination Certificate
2005-04-19
2005-04-19
Olsen, Allan (Department: 1763)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Total dielectric isolation
C438S458000, C438S705000, C438S715000, C438S960000, C438S977000, C216S033000, C216S036000, C216S056000, C216S057000, C216S058000, C216S079000
Reexamination Certificate
active
06881644
ABSTRACT:
A method for treating a film of material, which can be defined on a substrate, e.g., silicon. The method includes providing a substrate comprising a cleaved surface, which had a porous silicon layer thereon. The substrate may have a distribution of hydrogen bearing particles defined from the cleaved surface to a region underlying said cleaved surface. The method also includes increasing a temperature of the cleaved surface to greater than about 1,000 Degrees Celsius while maintaining the cleaved surface in a etchant bearing environment to reduce a surface roughness value by about fifty percent and greater. Preferably, the value can be reduced by about eighty or ninety percent and greater, depending upon the embodiment.
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Kang Sien G.
Malik Igor J.
Olsen Allan
Silicon Genesis Corporation
Townsend and Townsend / and Crew LLP
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