Smooth titanium nitride films having low resistivity

Compositions: coating or plastic – Coating or plastic compositions – Inorganic materials only

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

1062861, 1062864, 10628719, 428698, B32B 1500

Patent

active

060598727

ABSTRACT:
The resistivity of titanium nitride films is reduced, by about 40% (to less than about 60 .mu.Ohm-cm), for example; and, the film surface roughness is reduced, by about 45% (to less than 6 .ANG.) by using a combination of particular process conditions during deposition of the film. In particular, titanium atoms produced by impact of inert gas ions upon a titanium target travel through a high density, inductively coupled rf plasma, an ion metal plasma (IMP), in which the titanium atoms are at least partially ionized. The ionized titanium ions are contacted with ionized nitrogen atoms also present in the processing chamber. The resultant gas phase composition is contacted with the surface of a semiconductor substrate on which a titanium nitride barrier layer is to be deposited. By controlling the gas phase deposition mixture composition, the quantity of the deposition mixture contacting the substrate surface over a given time period, and the pressure in the process vessel, the resistivity and surface roughness of the titanium nitride layer is adjusted. The resistivity of the titanium nitride barrier layer is principally determined by the crystal orientation of the titanium nitride. The more nearly the crystal orientation approaches 100% of the {200} orientation (the lower the percentage of {111} orientation), the lower the film resistivity. Crystal orientation is obtained by increasing the ionized content of the deposition mixture and by slowing the rate of deposition of the titanium nitride film (barrier layer). The surface roughness of the titanium nitride layer is reduced principally by reducing the pressure in the process vessel, which affects the film formation dynamics. An increase in ionized content of the deposition mixture helps reduce surface roughness until an inflection point is reached, after which surface roughness increases with increased ionized content.

REFERENCES:
patent: 5091244 (1992-02-01), Bionard
patent: 5192589 (1993-03-01), Sandhu
patent: 5236868 (1993-08-01), Nulman
patent: 5308655 (1994-05-01), Eichanan et al.
patent: 5455197 (1995-10-01), Ghanbari et al.
patent: 5604140 (1997-02-01), Byun
patent: 5837362 (1998-11-01), O'Connell et al.
S.M. Rossnagel "Directional sputter deposition for semiconductor applications" Mat. Res. Soc. Symp. Proc., vol. 354, 1995, pp. 503-510.
M. Kawamura, Y. Abe, H. Yanagisawa, K. Sasaki "Characterization of TiN films prepared by a conventional magneton sputtering system: influence of nitrogen flow percentage and electrical properties" 1996 Elsevier Science S.A. PII S0040-6090 (96) 08749-4.
D.R. McKenzie, W.D. McFall, H.H. Nguyen, Y. Yin "Production of dense and oriented structures including titanium nitride by energetic condensation from plasmas" 1996 Elsevier Science B. V. PII S0039-6028 (96) 00298-1.
Wenbia O. Jiang, M. Grant Norton, J. Thomas Dickinson and N.D. Evans "Pulsed-laser deposition of titanium nitride" Mat. Res. Soc. Symp. Proc. vol. 388, 1995, pp. 103-108.
A. Bendavid, P.J. Martin, X. Wang, M. Wittling, T.J. Kinder "Deposition and modification of titanium nitride by ion assisted arc deposition" J. Vac. Sci. Technol. A 13(3), May/Jun. 1995.
Tohru Hara, Akira Yamanoue, Hiroki Ito, Ken Inoue, Gen Washidzu and Shigeaki Nakamura "Properties of titanium nitride films for barrier metal in aluminum ohmic contact systems" Japanese Journal of Applied Physics, Jul. 30, 1991, No. 7, Part 1, pp. 1447-1451.
Singapore Search Report as provided by Austrian Patent Office for Application No. 9800640-6, with a filing date of Mar. 27, 1998, mailed on May 7, 1999.
S. M. Rossnagel et al., "Thin, high atomic weight refractory film deposition for diffusion barrier, adhesion layer, and seed layer applicatons", J. Vac. Sci. Technol. B, vol. 14, No. 3, pp.1819-1827 (May/Jun. 1996).
J. Stimmell, "Properties of dc magnetron reactively sputtered TiN", J. Vac. Sci. Technol. B. vol. 4, No. 6, pp. 1377-1382 (Nov./Dec. 1986).
U.S. Patent Application Ser. No. 08/824,911, of Ngan et al., filed Mar. 27, 1997.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Smooth titanium nitride films having low resistivity does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Smooth titanium nitride films having low resistivity, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Smooth titanium nitride films having low resistivity will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1060546

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.