Small size, high speed GaAs data latch

Static information storage and retrieval – Systems using particular element – Semiconductive

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365154, 307584, G11C 700

Patent

active

047078081

ABSTRACT:
The invention provides small size, high speed data latches comprising memory cells that are fabricated according to a Gallium Arsenide (GaAs) process. The memory cells are implemented by a relatively few number of depletion metal semiconductor field effect transistors (MESFETs), saturated resistors and diodes. A common gate MESFET is utilized in each memory cell configuration as part oif a non-inverting positive feedback path to provide the gain necessary for bistable operation.

REFERENCES:
patent: 3798616 (1974-03-01), Spence
patent: 3975718 (1976-08-01), Goser
patent: 3997881 (1976-12-01), Hoffmann

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