Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-06-07
2005-06-07
Lee, Hsien-Ming (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S668000, C438S673000, C438S928000
Reexamination Certificate
active
06903012
ABSTRACT:
A sloped via contact is used to connect a contact on the front side of a wafer to a contact on the back side of the wafer. The walls of a small (less than 50-80 microns wide) via have typically been difficult to coat with metal. The present invention forms a small via with sloped walls, allowing easy access to the inside walls of the via for metal sputtering or plating. The small via can be formed using a dry etch process such as the well-known deep reactive ion etching (DRIE) process. Using any isotropic plasma etch process, the walls of the via are further etched from the wafer backside to create sloped walls in the via. The via is then coated with metal to make it conductive.
REFERENCES:
patent: 5536677 (1996-07-01), Hubacher
patent: 6184060 (2001-02-01), Siniaguine
patent: 6326689 (2001-12-01), Thomas
patent: 6485814 (2002-11-01), Moriizumi et al.
patent: 6662419 (2003-12-01), Wang et al.
Gan Qing
Geefay Frank S
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